PCCP themed issue: Organic Field Effect Transistors
Guest Editors: Zhenan Bao (Stanford University), Antonio Facchetti (Northwestern University), Wenping Hu (Chinese Academy of Sciences), K. Krishnamoorthy (CSIR-National Chemical Laboratory-Pune)
PCCP is delighted to announce a high-profile themed issue ‘Organic Field Effect Transistors’. It is our pleasure to invite you to submit an original research article for this themed issue.
Deadline for Submissions: 2nd June 2014
The promise of low cost and flexible transistors has encouraged research groups to explore many avenues and resulted in organic field effect transistors (OFETs) with device efficiencies comparable to amorphous silicon based devices. Nonetheless many questions remain about various aspects of underlying physical chemistry of such devices:
- The vast majority of research on OFETs has focused on developing the semiconductors, with relatively little effort devoted to identifying a dielectric that would also ameliorate the device efficiency. The interaction between the semiconductor and the dielectric is crucial, yet it remained unexplored until very recently.
- Additional insight into the interaction between the radicals of the semiconductor with the dielectric could lead to fabrication of OFETs with low operating voltages which would be better suited to large scale commercialisation.
- A few initial reports show that limited doping can have a positive impact on device performance. Understanding the magnitude of doping and the concurrent band edge modulation would be useful to fabricate highly efficient OFETs.
- The exploration of electrolytes to identify the nature of ions required as the dielectric and its diffusion could open a new area of research.
- Flurocarbon containing semiconductor based OFETs have been widely demonstrated to be n-type transistors: understanding the underlying mechanism for this phenomenon could lead to new and exciting developments in the field.
This themed issue in PCCP aims to provide new physical chemistry insights into these and other questions, providing a better understanding of how and why current devices function. Such knowledge and understanding will be essential in the quest to further enhance the efficiency of OFETs.
Further information:
- Manuscripts can be submitted in any reasonable format using our online submissions service.
- Submissions should be high quality manuscripts and will be subject to rigorous peer review.
- Please indicate upon submission that your manuscript is intended for this themed issue.
- The deadline for submissions to the themed issue is the 2nd June 2014, although submissions before this date are of course welcomed.
- Accepted papers will be published online as soon as they are ready, to avoid any delay.
