Nanoscale & Nanoscale Advances Blog

Scientists working at Yonsei University in Korea have prepared 1 dimensional logic gates and static random access memory (SRAM)
circuits from single zinc oxide nanowires, in combination with Al₂O₃, gold and indium tin oxide.

The excellent performance of the nanowires suggests that using long single nanowires could lead to further exciting developments in the nano-electronics field.

Full details can be found in this HOT Nanoscale Communication:

Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM
Young Tack Lee, Syed Raza Ali Raza, Pyo Jin Jeon, Ryong Ha, Heon-Jin Choib and Seongil Im
DOI: 10.1039/C3NR01015E