In this CrystEngComm Hot Article, Zhang et al. synthesised Si-doped In2O3(ZnO)3 (SDIZO) nanobelts using chemical vapour deposition (CVD). The Si behaves as a suitable n-type dopant that gives stable n-type conductivity with high electron concentration and low resistivity. The electron transport properties of the nanobelt devices show a non-linear characteristic due to the existence of the intrinsic statistical potential distribution.
Transparent oxide semiconductor (TOS) thin films with high optical transparency and good controllability of carrier generation have been studied intensively for photonic and electronic devices, such as, short-wavelength light emitting diodes and transparent field-effect transistors (TFETs).
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Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts
J. Y. Zhang, Y. Lang, Z. Q. Chu, X. Liu, L. L. Wu and X. T. Zhang
CrystEngComm, 2011, Advance Article, DOI: 10.1039/C1CE00004G
