Scientists at the University College London, UK, have developed a combinatorial aerosol-assisted chemical vapour deposition technique to deposit gallium-doped indium oxide thin films. The oxide films were deposited within composition graduated films from the aerosol-assisted CVD of GaMe3, InMe3 and HOCH2CH2OMe. The team behind the research say that this is the first time that a combinatorial aerosol-assisted CVD method has been described. The method provides a rapid route to investigate the effect of a dopant on the functional properties of a wide range of materials and since it is a solution-based technique, films with a range of compositions could be deposited even if volatile precursors are not available.
Read for Free until 15th August: Caroline E. Knapp, Andreas Kafizas, Ivan P. Parkin and Claire J. Carmalt, J. Mater. Chem., 2011, DOI: 10.1039/C1JM11606A, Advance Article
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