Releasing the electronic potential in aluminium nitride

This article is HOT as recommended by the referees. And we’ve made it free to access for 4 weeks.

Photo of free-standing AlN wafer

Photo of free-standing AlN wafer

The use of aluminium nitride in solid-state optoelectronic devices has been hindered by high defect levels limiting the output power, efficiency and lifetimes of mid-UV LEDs. Now, there is a possible solution, thanks to the method described in this HOT CrystEngComm paper.

R. Radhakrishnan Sumathi from Ludwig Maximilians University reports a physical vapour transport growth method using silicon carbide as a foreign substrate. The result is a more homogeneous structure than afforded by previous methods with uniform levels of defects and impurities across the wafer.

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Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds
R. Radhakrishnan Sumathi
CrystEngComm, 2013
DOI: 10.1039/C2CE26599K

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