The use of aluminium nitride in solid-state optoelectronic devices has been hindered by high defect levels limiting the output power, efficiency and lifetimes of mid-UV LEDs. Now, there is a possible solution, thanks to the method described in this HOT CrystEngComm paper.
R. Radhakrishnan Sumathi from Ludwig Maximilians University reports a physical vapour transport growth method using silicon carbide as a foreign substrate. The result is a more homogeneous structure than afforded by previous methods with uniform levels of defects and impurities across the wafer.
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Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds
R. Radhakrishnan Sumathi
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