Building graphene from carefully-modified superbenzene segments has been proposed as a way to help graphene overcome a major stumbling block limiting its application in electronic devices – by opening its bandgap to make it a true semiconductor.
Intrinsically, graphene is a semimetal with no bandgap. Boron nitride can afford graphene the electronic properties desired for atomically thin circuits. However, positioning these boron nitride-groups in just the right places to properly regulate electron flow through graphene is difficult.
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Read the original article in ChemComm – it’s free to access until 11th March:
Synthesis, structure and properties of C3-symmetric heterosuperbenzene with three BN units
Xiao-Ye Wang, Fang-Dong Zhuang, Xin-Chang Wang, Xiao-Yu Cao, Jie-Yu Wang and Jian Pei
Chem. Commun., 2015, Advance Article
DOI: 10.1039/C4CC10105G, Communication
